Introduction
One of the frontiers in the basic science in the advanced electronic device engineering is fabrication of nanometer-scale structure on the surface. Mass production of structures on silicon wafers on such scale will open new fields of basic research and technology, such as quantum electronics, high-density memory devices, minute magnetic devices and functionalized/mechanized surfaces [1].
Drawing desired patterns on wafer surfaces with ultimately thin material, i.e., monolayer adsorbate, is one of the strategic solutions to achieve the spatial resolution. Our strategy to realize this whole process is as follows:
- 1.
Deposition of a monolayer of organic molecules covalently bonded on surface Si atoms, to supply ultimately thin materials to construct surface structures.
- 2.
Alteration of the monolayer by fine-beam electron bombardment, as the method that has practically the best resolution and mass-productivity for minute scale patterning [1], [2].
- 3.
Deposition of metal atoms selectively over the bombarded portions, to enhance the utility of patterns formed for practical purposes.
By employing a fine beam (diameter <20 nm) electron gun, the ultimate goal of our strategy for nanometer-scale monolayer fabrication will be reached. The work to be done next will be to realize the ultimate resolution of fabrication of surface structures with the process presented with using a fine electron beam.
Section snippets
Experimental
The substrate silicon wafers used were n-type Si(111) (resistivity 3–8 cm) supplied by Shinetsu Handotai. Prior to all experiments, Si(111) pieces were sonicated in organic solvents and then treated in hot SPM solution (four parts of concentrated H2SO4+one part of 30% H2O2 mixture, heated at 120°C) for 10 min and stored in Milli-Q-purified water. Just before use, they were immersed in 40% NH4F for 10 min. This is the procedure to prepare the hydrogen-terminated Si(111) (H:Si(111)) [8].
Surface
Results and discussion
Preparation of p-substituted phenyl moieties were carried out by cyclic voltammetry according to Allongue et al. [3], [4]. For electrolysis we used a clean Pt wire as the quasi-reference electrode, a carbon rod for the counter electrode, and the Si wafer pressed at a bore made on the container. The aqueous solutions for electrolysis were 0.1 M H2SO4+2% w/w HF added with 2–0.2 mM of diazonium salts. We used BF4− salts of p-Br–C6H4–N2+, p-NO2–C6H4–N2+, p-CH3–C6H4–N2+, p-CF3–C6H4–N2+, p-CH3)2CH–C6H
Conclusion
The electrolysis of para-substituted benzenediazonium salts on H:Si(111) can deposit a monolayer of organic moieties and a precipitate layer simultaneously, in aqueous and dehydrated acetonitrile electrolytes. Rinsing in a proper solvent can remove the precipitate. The reaction of Grignard reagents and H:Si(111) can deposit a homogeneous robust monolayer of alkyl groups corresponding to the delivered Grignard reagents. The alkyl moieties formed are arranged randomly within the monolayer. The
Acknowledgments
This work was supported by the Research for the Future Project “Wafer-Scale Formation Process of Nano Dots”, the Japan Society for the Promotion of Science, Iketani Science and Technology Foundation, the Murata Science Foundation and Yazaki Memorial Foundation for Science and Technology. The authors are thankful to the generous donation by Matsushita Research Institute, Tokyo, Inc.
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Citation Excerpt :
High-resolution electron energy loss spectroscopy (HREELS) and Auger electron spectroscopy (AES) were employed to clarify the internal bonding in moieties and detect the formation of C–Si bonds. The C–Si covalent bond is the most important value of the organic adsorption system on Si surfaces, since the thermal stability, chemical robustness, and applicability to practical nanometer-scale technology are originated of the C–Si covalent bond fixing the moiety [18,19]. Prior to this experimental survey, a density-function-theory (DFT) calculation was performed, aided by a commercial program package (Accelrys DMol3 Ver.
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The covalent attachment of alkyl groups to silicon surfaces, via carbon–silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(111) or H:Si(111) under ultraviolet light irradiation. The formation of Cl-terminated Si(111) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(111) from gas-phase CH4 or CH2
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The recent topics of our researches concerned with the electrochemical fabrication process of highly functionalized metal thin films and minute structures are reviewed. We present three topics; the soft magnetic materials of Co alloys by electro- and electroless-plating, the micro-dot formation by Ni electroless deposition, and fabrication of barrier layer on SiO2 by electroless deposition for ULSI technology. The magnetic property of electrodeposited CoNiFe film was deteriorated by the co-deposition of a small amount of sulfur, whereas the carbon co-deposition improved resistivity of the film. The electroless soft magnetic materials were also proposed for future extremely high-density recording system. As the fine dot formation, the electroless deposition processes for producing fine metal structures were demonstrated. For advanced nano-scale patterning technology, an organic monolayer directly grafted to the Si surface was applied to a novel process of selective metal deposition. Another type of organic monolayer, a self-assembled monolayer of organosilane, was also utilized as an adhesive/catalytic layer for fabrication of a diffusion barrier layer on SiO2 for future ULSI technology.
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Angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) of a Si(111) surface regularly terminated by methyl groups is reported. The electrochemical methylation was performed in inert atmosphere. The cleanliness and 1×1 ordering of the surface were confirmed by Auger electron spectroscopy and reflection high-energy electron diffraction, respectively. The energy band diagram has been obtained from ARUPS and each energy level was assigned from the comparison with the results of hydrogen-terminated Si(111) and quantum chemical cluster calculation.
Alkyl monolayers on Si(111) as ultrathin electron-beam patterning media
2002, Journal of Electroanalytical Chemistry
A process of electron-beam patterning of the surface of a Si(111) wafer was developed by utilizing alkyl monolayers as ultrathin patterning media. We performed chemical benchmark tests of the electron-beam patterning of alkyl monolayers on Si(111) in ambient oxygen, followed by the deposition of a metal on bombarded areas by immersion into an aqueous solution containing metal ions of the metal to be deposited. We investigated practically important issues related to this process, such as the robustness of organic monolayers against oxidation in aqueous media, the contrast enhancement of the bombarded areas by metal deposition, and the detectability of electron-bombarded areas of the monolayers by scanning tunneling microscopy (STM). The alkyl-covered Si(111) surface was significantly resistant to the oxidation by dissolved O2 in pure water, compared to hydrogen-terminated Si(111). By immersion into a solution containing CuSO4+HF+NH4F, electron-bombarded areas were visualized by the presence of the deposit of Cu. Electron-bombarded areas were also distinguishable from intact areas in terms of height contrast or roughness measured by STM. These results indicate the usefulness of alkyl monolayers for nano-scale patterning on silicon wafers.
Patterning by Etching at the Nanoscale (PENs) on Si(111) through the controlled etching of PDMS
2007, Chemistry of Materials
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